Elements of Electromigration: Electromigration in 3D IC technology, Tu, King-Ning ; Liu, Yingxia
Автор: Ho, P. S., Название: Electromigration in metals : ISBN: 1107032385 ISBN-13(EAN): 9781107032385 Издательство: Cambridge Academ Рейтинг: Цена: 12355.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Learn to assess electromigration reliability, and design more resilient chips, from this comprehensive resource. Building from fundamental physics to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. This is an ideal text for materials scientists and chip design engineers.
Описание: Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field.
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