Group III-Nitride Semiconductor Optoelectronics, C. Jayant Praharaj
Автор: Zhou Название: III-Nitride LEDs ISBN: 9811904359 ISBN-13(EAN): 9789811904356 Издательство: Springer Рейтинг: Цена: 14025.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.
Автор: Xie, Rong-Jun Название: Nitride Phosphors and Solid-State Lighting ISBN: 0367576953 ISBN-13(EAN): 9780367576950 Издательство: Taylor&Francis Рейтинг: Цена: 7808.00 р. Наличие на складе: Нет в наличии.
Автор: Xie, Rong-jun Li, Yuan Qiang Hirosaki, Naoto Yamam Название: Nitride phosphors and solid state lighting ISBN: 1439830118 ISBN-13(EAN): 9781439830116 Издательство: Taylor&Francis Рейтинг: Цена: 28327.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Nitride Phosphors and Solid-State Lighting provides an in-depth introduction to the crystal chemistry, synthesis, luminescence, and applications of phosphor materials for solid-state lighting, mainly focusing on new nitride phosphors. Drawing on their extensive experimental work, the authors offer a multidisciplinary study of phosphor materials that encompasses materials science, inorganic chemistry, solid-state chemistry, solid-state physics, optical spectroscopy, crystal field theory, and computational materials science.
The book begins with an introduction to the principles, semiconductor/phosphor materials, and characterizations of solid-state lighting and white light-emitting diodes (LEDs). It then discusses the optical and luminescence processes occurring in optically active centers of solid materials and presents the photoluminescence properties of traditional phosphors for white LEDs, including garnets, aluminates, silicates, sulfides, oxysulfides, phosphates, and scheelites.
The remainder of the text focuses on newly developed nitride phosphors. The authors describe the crystal chemistry of general nitride compounds, the crystal structure and photoluminescence properties of new nitride phosphors, and synthetic methods for preparing nitride phosphors. They detail the structural analysis of nitride phosphors and present experimental and computational results of typical nitride phosphors. The authors also examine key issues, such as excitation and emission spectra, thermal quenching, and quantum efficiency. The final chapter explores applications of nitride phosphors in white LEDs for general lighting and LCD backlight purposes.
Covering novel luminescent materials, this book brings you up to date on the evolving field of solid-state lighting. It illustrates the fundamentals, synthesis, properties, and applications of the latest nitride phosphor materials.
Описание: The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.
Автор: Hao Название: Nitride Wide Bandgap Semiconductor ISBN: 1498745121 ISBN-13(EAN): 9781498745123 Издательство: Taylor&Francis Рейтинг: Цена: 28327.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
Автор: Tadjer, Marko Название: Thermal Management Of Gallium Nitride Electronics ISBN: 0128210842 ISBN-13(EAN): 9780128210840 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Blockchain technology has come a long way since the initial vision published by Satoshi Nakamoto in 2008. Big buzz words like "bitcoin," "blockchain," and "cryptocurrency" are everywhere. Companies and governments have started to use blockchain technology in earnest and will increasingly do so for the foreseeable future. This book takes an in-depth look at blockchain technology and how users can take advantage of its potential. Since its initial conception, blockchain has encompassed both a social promise and new technology. Originally proposed as a solution for Bitcoin`s cryptocurrency record-keeping system, blockchains are now used to store the records of all types of applications. Core services we all depend on like the transfer of money, voting, land records, IP rights, and identity all rely on intermediaries. Blockchain software has begun taking the place of these antiquated systems. The software becomes the trusted record-keeping system, and the rules programed into the software become the intermediaries. This book explains the fundamentals of blockchain technology and assumes that the reader has little to no knowledge of the subject. Topics are explained as simply as possible, while not obscuring details that may affect the reader. It also gives the reader insight into the critical differences in blockchain software and will provide them with a basic understanding of how and why these systems work. After reading this book, the reader will be able to speak with confidence on the topic, know key differences in technology. The reader will also have critical insight into blockchain software`s inherent limitations and shortcomings. This book is also the definitive guide to the Blockchain Technology Foundation (BTF) exam from EXIN. It will prepare the reader for the test, and each chapter ends with review questions for extra guidance in preparing for the exam.
Автор: Matsuoka Название: Epitaxial Growth of III-Nitride Compounds ISBN: 3319766406 ISBN-13(EAN): 9783319766409 Издательство: Springer Рейтинг: Цена: 6097.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so.
Автор: Chu, Rongming Название: Iii-Nitride Electronic Devices,102 ISBN: 0128175443 ISBN-13(EAN): 9780128175446 Издательство: Elsevier Science Рейтинг: Цена: 27791.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.
Автор: Tae-Yeon Seong; Jung Han; Hiroshi Amano; Hadis Mor Название: III-Nitride Based Light Emitting Diodes and Applications ISBN: 9811099596 ISBN-13(EAN): 9789811099595 Издательство: Springer Рейтинг: Цена: 28051.00 р. Наличие на складе: Нет в наличии.
Описание: This book discusses LED production issues, including needed improvement in growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, materials quality, efficiency droop, growth in different orientations and polarization.
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