Описание: Devices based on disordered semiconductors have wide applications. This textbook connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials.
Автор: Pawade Vijay B., Dhoble Sanjay J., Swart Hendrik C. Название: Nanoscale Compound Semiconductors and their Optoelectronics Applications ISBN: 0128240628 ISBN-13(EAN): 9780128240625 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Nanoscale Compound Semiconductors and their Optoelectronics Applications provides the basic and fundamental properties of nanoscale compound semiconductors and their role in modern technological products. The book discusses all important properties of this important category of materials such as their optical properties, size-dependent properties, and tunable properties. Key methods are reviewed, including synthesis techniques and characterization strategies. The role of compound semiconductors in the advancement of energy efficient optoelectronics and solar cell devices is also discussed. The book also touches on the photocatalytic property of the materials by doping with graphene oxides--an emerging and new pathway.
Описание: Reflecting the interdisciplinary nature of Quantum Efficiency in Complex Systems, this title is of interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.
Автор: Suresh C. Jain Название: Conducting Organic Materials and Devices,81 ISBN: 0127521909 ISBN-13(EAN): 9780127521909 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Conducting polymers were discovered in 1970s in Japan. Since this discovery, there has been a steady flow of new ideas, new understanding, new conducing polymer (organics) structures and devices with enhanced performance. Several breakthroughs have been made in the design and fabrication technology of the organic devices. Almost all properties, mechanical, electrical, and optical, are important in organics. This book describes the recent advances in these organic materials and devices.
Автор: Robert K. Willardson Название: Processing and Properties of Compound Semiconductors,73 ISBN: 0127521828 ISBN-13(EAN): 9780127521824 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Нет в наличии.
Автор: Christopher Nebel Название: Thin-Film Diamond I ISBN: 0127521852 ISBN-13(EAN): 9780127521855 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Нет в наличии.
Описание: Reviews the advances made of thin film diamond, a semiconductor that may one day rival silicon as the material of choice for electronics. This work covers topics such as: the results regarding growth and structural properties, doping and defect characterization, hydrogen in and on diamond as well as surface properties in general, and more.
Автор: Robert Fairman Название: Semiconducting Chalcogenide Glass II,79 ISBN: 0127521887 ISBN-13(EAN): 9780127521886 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Нет в наличии.
Описание: Chalcogenide glass is made up of many elements from the Chalcogenide group. This work presents a comprehensive survey of the properties of chalcogenide glass under various external impacts. It deals with the electrical and optical properties of chalcogenide vitreous semiconductors (CVS).
Автор: Eicke R. Weber Название: Quantum Efficiency in Complex Systems, Part I,83 ISBN: 0123750423 ISBN-13(EAN): 9780123750426 Издательство: Elsevier Science Рейтинг: Цена: 30318.00 р. Наличие на складе: Нет в наличии.
Описание: Reflecting the truly interdisciplinary nature of the field of semiconductor materials, this title is suitable for physicists, chemists, materials scientists, and device engineers in modern industry.
Автор: Ching-Hua Su Название: Vapor Crystal Growth and Characterization ISBN: 3030396541 ISBN-13(EAN): 9783030396541 Издательство: Springer Рейтинг: Цена: 12196.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications.
The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process.
This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Описание: Computational Electrodynamics is a vast research field with a wide variety of tools. In physics the principle of gauge invariance plays a pivotal role as a guide towards a sensible formulation of the laws of nature as well as computing the properties of elementary particles using the lattice formulation of gauge theories, yet the gauge principle has played a much less pronounced role in performing computation in classical electrodynamics. In this work the author will demonstrate that starting from the gauge formulation of electrodynamics using the electromagnetic potentials leads to computational tools that can very well compete with the conventional electromagnetic field-based tools. Once accepting the formulation based on gauge fields, the computational code is very transparent due to the mimetic mapping of the electrodynamic variables on the computational grid. Although the illustrations and applications originate from microelectronic engineering, the method has a much larger range of applicability. Therefore this book is of interest to everyone having interest in computational electrodynamics. The volume is organized as follows: In part 1, a detailed introduction and overview is presented of the Maxwell equations as well as the derivation of the current and charge densities is different materials. Semiconductors are responding to electromagnetic fields in a non-linear way and the induced complications are discussed in detail. In part 2, the transition of the theory of electrodynamics, using the gauge potentials, to a formulation that can serve as the gateway to computational code is presented. In part 3, the feasibility and success of the methods of part 2 are demonstrated by a collection of microelectronic device designs. Part 4 focuses on a set of topical themes that brings the reader to the frontier of research in building the simulation tools using the gauge principle in computational electrodynamics.Technical topics discussed in the book include:Electromagnetic Field EquationsConstitutive RelationsDiscretization and Numerical AnalysisFinite Element and Finite Volume MethodsDesign of Integrated Passive Components.
Автор: Singisetti Uttam, Razzak Towhidur, Zhang Yuewei Название: Wide Bandgap Semiconductor Electronics and Devices ISBN: 9811216479 ISBN-13(EAN): 9789811216473 Издательство: World Scientific Publishing Рейтинг: Цена: 19008.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: 'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field -- newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
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