Integration Techniques for Micro/Nanostructure-Based Large-Area Electronics, Carlos Garcia Nunez, Fengyuan Liu, Sheng Xu, Ravinder Dahiya
Автор: Leprince-Wang Название: Piezoelectric ZnO Nanostructure for Energy Harvesting ISBN: 1848217188 ISBN-13(EAN): 9781848217188 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Over the past decade, ZnO as an important II-VI semiconductor has attracted much attention within the scientific community over the world owing to its numerous unique and prosperous properties.
Автор: Ali Rostami; Hamed Baghban; Reza Maram Название: Nanostructure Semiconductor Optical Amplifiers ISBN: 3642266061 ISBN-13(EAN): 9783642266065 Издательство: Springer Рейтинг: Цена: 12196.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Nanostructure Semiconductor Optical Amplifiers reviews all-optical processing methods currently available. High frequency operation of SOAs are also discussed, in addition to a new all-optical pumping method for the implementation of semiconductor optical amplifiers.
Автор: Vladimir V. Mitin, Viacheslav A. Kochelap, Mitra Dutta, Michael A. Stroscio Название: Introduction to Optical and Optoelectronic Properties of Nanostructures ISBN: 1108428142 ISBN-13(EAN): 9781108428149 Издательство: Cambridge Academ Рейтинг: Цена: 14731.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Get to grips with the fundamental properties of optical and optoelectronic nanostructures. This comprehensive guide is accessible for students and practitioners in disciplines such as nanoscience, physics, electrical engineering, and materials science, and includes detailed mathematical derivations, worked examples and end-of-chapter problems.
Название: Graphene, Carbon Nanotubes, and Nanostructures ISBN: 1138077283 ISBN-13(EAN): 9781138077287 Издательство: Taylor&Francis Рейтинг: Цена: 13779.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Graphene, Carbon Nanotubes, and Nanostructures: Techniques and Applications offers a comprehensive review of groundbreaking research in nanofabrication technology and explores myriad applications that this technology has enabled.The book examines the historical evolution and emerging trends of nanofabrication and supplies an analytical understanding of some of the most important underlying nanofabrication technologies, with an emphasis on graphene, carbon nanotubes (CNTs), and nanowires.
Featuring contributions by experts from academia and industry around the world, this book presents cutting-edge nanofabrication research in a wide range of areas. Topics include:
CNT electrodynamics and signal propagation models
Electronic structure calculations of a graphene-hexagonal boron nitride interface to aid the understanding of experimental devices based on these heterostructures
How a laser field would modify the electronic structure and transport response of graphene, to generate bandgaps
The fabrication of transparent CNT electrodes for organic light-emitting diodes
Direct graphene growth on dielectric substrates, and potential applications in electronic and spintronic devices
CNTs as a promising candidate for next-generation interconnect conductors
CMOS-CNT integration approaches, including the promising localized heating CNT synthesis method
CNTs in electrochemical and optical biosensors
The synthesis of diamondoids by pulsed laser ablation plasmas generated in supercritical fluids, and possible applications
The use of DNA nanostructures in lithography
CMOS-compatible silicon nanowire biosensors
The use of titanium oxide-B nanowires to detect explosive vapors
The properties of protective layers on silver nanoparticles for ink-jet printing
Nanostructured thin-film production using microreactors
A one-stop reference for professionals, researchers, and graduate students working in nanofabrication, this book will also be useful for investors who want an overview of the current nanofabrication landscape.
Автор: Ndebeka-Bandou Camille, Carosella Francesca & Bast Название: Quantum States And Scattering In Semiconductor Nanostructures ISBN: 1786343010 ISBN-13(EAN): 9781786343017 Издательство: World Scientific Publishing Рейтинг: Цена: 15523.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This book is an introduction to quantum states and of their scattering in semiconductor nanostructures. Written with exercises and detailed solutions, it is designed to enable readers to start modelling actual electron states and scattering in nanostructures. It first looks at practical aspects of quantum states and emphasises the variational and perturbation approaches. Following this there is analysis of quasi two-dimensional materials, including discussion of the eigenstates of nanostructures, scattering mechanisms and their numerical results.
Focussing on practical applications, this book moves away from standard discourse on theory and provides students of physics, nanotechnology and materials science with the opportunity to fully understand the electronic properties of nanostructures.
Автор: Banadaki Название: Graphene Nanostructures ISBN: 9814800368 ISBN-13(EAN): 9789814800365 Издательство: Taylor&Francis Рейтинг: Цена: 17762.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book compiles and details cutting-edge research in graphene nanostructures and provides circuit designers with recent progress on graphene transistors for nanoscale circuits. The transistors in integrated circuits are approaching atomic scales.
Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
Автор: Aktsipetrov O. A., Baranova I. M., Evtyukhov K. N. Название: Second Order Non-Linear Optics of Silicon and Silicon Nanostructures ISBN: 1498724159 ISBN-13(EAN): 9781498724159 Издательство: Taylor&Francis Рейтинг: Цена: 30624.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
The theory and practice of the non-linear optics of silicon are inextricably linked with a variety of areas of solid state physics, particularly semiconductor physics. However, the current literature linking these fields is scattered across various sources and is lacking in depth. Second Order Non-linear Optics of Silicon and Silicon Nanostructures describes the physical properties of silicon as they apply to non-linear optics while also covering details of the physics of semiconductors.
The book contains six chapters that focus on:
The physical properties and linear optics of silicon
Basic theoretical concepts of reflected second harmonics (RSH)
The authors' theory of the generation of RSH at the non-linear medium-linear medium interface
An analytical review of work on the non-linear optics of silicon
The results of non-linear optical studies of silicon nanostructures
A theory of photoinduced electronic processes in semiconductors and their influence on RSH generation
The book also includes methodological problems and a significant amount of reference data. It not only reflects the current state of research but also provides a single, thorough source of introductory information for those who are becoming familiar with non-linear optics. Second Order Non-linear Optics of Silicon and Silicon Nanostructures is a valuable contribution to the fields of non-linear optics, semiconductor physics, and microelectronics, as well as a useful resource for a wide range of readers, from undergraduates to researchers.
Автор: Ndebeka-Bandou Camille, Carosella Francesca & Bast Название: Quantum States And Scattering In Semiconductor Nanostructures ISBN: 1786343029 ISBN-13(EAN): 9781786343024 Издательство: World Scientific Publishing Рейтинг: Цена: 9504.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This book is an introduction to quantum states and of their scattering in semiconductor nanostructures. Written with exercises and detailed solutions, it is designed to enable readers to start modelling actual electron states and scattering in nanostructures. It first looks at practical aspects of quantum states and emphasises the variational and perturbation approaches. Following this there is analysis of quasi two-dimensional materials, including discussion of the eigenstates of nanostructures, scattering mechanisms and their numerical results.
Focussing on practical applications, this book moves away from standard discourse on theory and provides students of physics, nanotechnology and materials science with the opportunity to fully understand the electronic properties of nanostructures.
Описание: Bridges the gap between FDTD theory and the implementation of practical simulation techniques This is the first publication that guides readers step by step through the implementation of electromagnetic simulation techniques based on FDTD methods. These simulation techniques serve as an essential bridge between FDTD methods and their applications.
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